(China (Mainland))
Product Summary
The SI4812BDY-T1-E3 is an N-Channel 30-V (D-S) MOSFET with Schottky Diode.
Parametrics
SI4812BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage (MOSFET) VDS: 30V; (2)Reverse Voltage (Schottky): 30V; (3)Gate-Source Voltage (MOSFET) VGS: ±20V; (4)Continuous Drain Current (TJ = 150 ℃) (MOSFET) ID: 9.5A; (5)Pulsed Drain Current (MOSFET) IDM: 50A; (6)Continuous Source Current (MOSFET Diode Conduction) IS: 2.1A; (7)Average Forward Current (Schottky) IF: 1.4A; (8)Pulsed Forward Current (Schottky) IFM: 30A; (9)Single Pulse Avalanche Current IAS: 5A; (10)Avalanche Energy EAS: 1.25 mJ; (11)Maximum Power Dissipation (MOSFET) PD: 2.5W; (12)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.
Features
SI4812BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)LITTLE FOOT Plus Power MOSFET; (3)100 % Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI4812BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Si4800 |
Other |
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Data Sheet |
Negotiable |
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SI4800,518 |
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MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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