Product Summary
The IKW40N120T2 is an IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode.
Parametrics
IKW40N120T2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current (Tj=150℃), TC = 25℃: 75A; (3)TC = 110℃: 40A; (4)Pulsed collector current, tp limited by Tjmax: 160A; (5)Turn off safe operating area: 160A; (6)DC Diode forward current (Tj=150℃), TC = 25℃: 75A; TC = 110℃: 40A; (7)Diode pulsed current, tp limited by Tjmax: 160A; (8)Gate-emitter voltage VGE: ±20 V; (9)Short circuit withstand time: 10 μs; (10)Power dissipation, TC = 25℃: 480 W; (11)Operating junction temperature Tj: -40 to +175℃; (12)Storage temperature: -55 to +150℃; (13)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.
Features
IKW40N120T2 features: (1)Best in class TO247; (2)Short circuit withstand time-10μs; (3)Designed for: Frequency Converters; Uninterrupted Power Supply; (4)TrenchStop 2nd generation for 1200 V applications offers: very tight parameter distribution; high ruggedness, temperature stable behavior; (5)Easy paralleling capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode; (9)Qualified according to JEDEC1 for target applications; (10)Pb-free lead plating; RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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IKW40N120H3 |
Infineon Technologies |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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IKW40T120 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
Data Sheet |
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