(China (Mainland))
Product Summary
The SI4800BDY-T1-E3 is an N-Channel Reduced Qg, Fast Switching MOSFET.
Parametrics
SI4800BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±25V; (3)Continuous Drain Current (TJ = 150 ℃) ID: 9A; (4)Pulsed Drain Current (10 μs Pulse Width) IDM: 40A; (5)Continuous Source Current (Diode Conduction) IS: 2.3A; (6)Avalanche Current IAS: 15A; (7)Single-Pulse Avalanche Energy EAS: 11.25 mJ; (8)Maximum Power Dissipation PD: 2.5W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.
Features
SI4800BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET; (3)High-Efficient PWM Optimized; (4)100 % UIS and Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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Si4800 |
Other |
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Data Sheet |
Negotiable |
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SI4800,518 |
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MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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