Product Summary
The IRFP260NPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFP260NPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 50 A; (2)Continuous Drain Current, VGS @ 10V: 35 A; (3)Pulsed Drain Current: 200 A; (4)Power Dissipation: 300 W; (5)Linear Derating Factor: 2.0 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 560 mJ; (8)Avalanche Current: 50 A; (9)Repetitive Avalanche Energy: 30 mJ; (10)Peak Diode Recovery dv/dt: 10 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to +175 ℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRFP260NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP260NPBF |
International Rectifier |
MOSFET MOSFT 200V 49A 40mOhm 156nCAC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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Other |
Data Sheet |
Negotiable |
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IRFP044N |
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Data Sheet |
Negotiable |
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IRFP044NPBF |
International Rectifier |
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
Data Sheet |
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IRFP044PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP048 |
Vishay/Siliconix |
MOSFET N-Chan 60V 70 Amp |
Data Sheet |
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