(China (Mainland))
Product Summary
The USF05G49 is a toshiba thyristor. It is a silicon planar type. The device is designed for low power switching and control applications.
Parametrics
USF05G49 absolute maximum ratings: (1)Repetitive Peak Off.State Voltage and Repetitive Peak Reverse Voltage VDRM VRRM: 400 V; (2)Non-Repetitive Peak Reverse Voltage(Non.Repetitive<5ms, Tj = 0 to 125℃) VRSM: 500 V; (3)Average On.State Current(Half Sine Waveform) IT (AV): 500 mA; (4)R.M.S On.State Current IT (RMS): 800 mA; (5)Peak One Cycle Surge On.State Current (Non.Repetitive) ITSM: 9 (50Hz) A; (6)I2t Limit Value I2t: 0.4 A2s; (7)Critical Rate of Rise of On-State Current di/dt: 10 A / μs; (8)Peak Gate Power Dissipation PGM: 0.1 W; (9)Average Gate Power Dissipation PG(AV): 0.01 W; (10)Peak Forward Gate Voltage VFGM: 3.5 V; (11)Peak Reverse Gate Voltage VRGM: -5 V; (12)Peak Forward Gate Current IGM: 125 mA; (13)Junction Temperature Tj: -40 to 125 ℃; (14)Storage Temperature Range Tstg: -40 to 125 ℃.
Features
USF05G49 features: (1)Repetitive Peak Off.State Voltage: VDRM = 400 V; (2)Repetitive Peak Reverse Voltage: VRRM = 400 V; (3)Average On.State Current: IT (AV) = 500 mA.
Diagrams
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