Product Summary

The MRF581G is a RF & microwave discrete low power transistor. It is designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Parametrics

MRF581G absolute maximum ratings: (1)VCEO Collector-Emitter Voltage: 18 Vdc; (2)VCBO Collector-Base Voltage: 30 Vdc; (3)VEBO Emitter-Base Voltage: 2.5 Vdc; (4)IC Collector Current: 200 mA.

Features

MRF581G features: (1)Low Noise - 2.5 dB @ 500 MHZ; (2)High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz; (3)Ftau - 5.0 GHz @ 10v, 75mA; (4)Cost Effective MacroX Package.

Diagrams

MRF581G diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF581G
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