(China (Mainland))
Product Summary
The LN51L is a GaAs Infrared Light Emitting Diode. It is designed for optical control systems.
Parametrics
LN51L absolute maximum ratings: (1)Power dissipation PD: 150 mW; (2)Forward current (DC) IF: 100 mA; (3)Pulse forward current IFP: 2 A; (4)Reverse voltage (DC) VR: 5 V; (5)Operating ambient temperature Topr: –25 to +100 ℃; (6)Storage temperature Tstg: –30 to +100 ℃.
Features
LN51L features: (1)High-power output, high-efficiency: PO = 6 mW (typ.); (2)Fast response: tr, tf = 1 μs (typ.); (3)Infrared light emission close to monochromatic light: λP =950 nm (typ.); (4)Narrow directivity, suitable for effective use of optical output: θ = 8 deg.; (5)TO-18 standard type package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 LN51L |
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IR LED 950NM 8 DEG T0-18 |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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LN5110ALAMW |
Other |
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Data Sheet |
Negotiable |
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LN5110ALKMW |
Other |
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Data Sheet |
Negotiable |
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LN5110GAMW |
Other |
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Data Sheet |
Negotiable |
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LN5110GKMW |
Other |
|
Data Sheet |
Negotiable |
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LN5110OAMW |
Other |
|
Data Sheet |
Negotiable |
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LN5110OGAMW |
Other |
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Data Sheet |
Negotiable |
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