Product Summary

The 29EE010-90-4C-NH is a 1 Mbit (128K x8) Page-Write EEPROM. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010-90-4C-NH writes with a single power supply. Internal Erase/Program is transparent to the user. The 29EE010-90-4C-NH conforms to JEDEC standard pinouts for byte-wide memories.

Parametrics

29EE010-90-4C-NH absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Through Hole Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (9)Output Short Circuit Current: 100 mA.

Features

29EE010-90-4C-NH features: (1)Single Voltage Read and Write Operations; (2)Superior Reliability; (3)Low Power Consumption; (4)Fast Page-Write Operation; (5)Fast Read Access Time; (6)Latched Address and Data; (7)Automatic Write Timing; (8)End of Write Detection; (9)Hardware and Software Data Protection; (10)Product Identification can be accessed via Software Operation; (11)TTL I/O Compatibility; (12)JEDEC Standard; (13)All non-Pb (lead-free) devices are RoHS compliant.

Diagrams

29EE010-90-4C-NH diagram